IXFH320N10T2
IXFT320N10T2
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
TO-247 (IXFH) Outline
g fs
C iss
V DS = 10V, I D = 60A, Note 1
80
130
26
S
nF
C oss
V GS = 0V, V DS = 25V, f = 1MHz
2250
pF
1
2
3
?P
C rss
450
pF
R Gi
Gate Input Resistance
1.48
Ω
t d(on)
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
R thJC
R thCH
Resistive Switching Times
V GS = 10V, V DS = 0.5 ? V DSS , I D = 100A
R G = 1 Ω (External)
V GS = 10V, V DS = 0.5 ? V DSS , I D = 0.5 ? I D25
TO-247
36
46
73
177
430
110
125
0.21
ns
ns
ns
ns
nC
nC
nC
0.15 ° C/W
° C/W
e
Terminals: 1 - Gate
3 - Source
Dim. Millimeter
Min. Max.
A 4.7 5.3
A 1 2.2 2.54
A 2 2.2 2.6
b 1.0 1.4
b 1 1.65 2.13
b 2 2.87 3.12
C .4 .8
D 20.80 21.46
2 - Drain
Inches
Min. Max.
.185 .209
.087 .102
.059 .098
.040 .055
.065 .084
.113 .123
.016 .031
.819 .845
E 15.75 16.26
.610 .640
Source-Drain Diode
e 5.20 5.72
L 19.81 20.32
0.205 0.225
.780 .800
Symbol Test Conditions
(T J = 25 ° C, Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
L1 4.50
? P 3.55 3.65
Q 5.89 6.40
.177
.140 .144
0.232 0.252
I S
I SM
V SD
t rr
I RM
Q RM
V GS = 0V
Repetitive, Pulse Width Limited by T JM
I F = 100A, V GS = 0V, Note 1
I F = 150A, V GS = 0V
-di/dt = 100A/ μ s
V R = 50V
98
6.6
320
320
1200
1.2
A
A
V
ns
A
nC
R 4.32 5.49
S 6.15 BSC
TO-268 (IXFT) Outline
.170 .216
242 BSC
Notes:
1. Pulse test, t ≤ 300 μ s, duty cycle, d ≤ 2%.
Terminals: 1 - Gate
3 - Source
2 - Drain
4 - Drain
2. Includes lead resistance.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,860,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
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